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Controlled fabrication of colloidal semiconductor-metal hybrid heterostructures: Site selective metal photo deposition

机译:胶体半导体-金属混合异质结构的受控制造:位置选择性金属光沉积

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摘要

Reliable synthesis of semiconductor-metal heterostructures would increase their availability for fundamental studies and applications in catalytic, magnetic, and opto-electronic devices. Here, we demonstrate there are three main pathways for the formation of Pt and Pd nanoparticles on CdS and CdS04Se0.6 nanorods. A thermal pathway and photochemical pathway occur when the metal precursor is heated or irradiated directly in the presence of an electron donor, leading to homogeneous nucleation and formation of freestanding metal nanoparticles. A separate photochemical pathway occurs in the presence of semiconductor nanorods, leading to exciton formation and quenching by electron trapping at surface defect sites. The localized electrons act as seeding points, leading to heterogeneous nucleation and formation of surface-bound metal nanoparticles. Careful selection of synthetic conditions allows deposition of Pt and Pd particles on CdS and CdS0.4Se0.6 nanorods with a high degree of selectivity (90-95% surface-bound obtained photochemically) over the formation of freestanding metal particles (70-94% unattached under thermal conditions). In addition, metal photo deposition occurs on specific segments of CdS0.4Se0.6 nanorods with compositional anisotropy by taking advantage of the band gap differential between different nanodomains. Irradiation at short wavelengths favors formation of Pd nanoparticles on the large band gap CdS-rich region of the nanorods (57% and 55% at 350 and 420 nm, respectively), while irradiation at longer wavelengths favors the formation of Pd nanoparticles on the small band gap CdSe-rich region of the nanorods (83% at 575 nm). The ability to tune the spatial composition of these and similar heterostructures will impact the ability to engineer and direct energy flows at the nanoscale.
机译:半导体-金属异质结构的可靠合成将增加其在催化,磁性和光电设备中的基础研究和应用的可用性。在这里,我们演示了在CdS和CdSO4Se0.6纳米棒上形成Pt和Pd纳米颗粒的三种主要途径。当在电子给体的存在下直接加热或辐照金属前体时,会发生热途径和光化学途径,从而导致均相成核并形成独立的金属纳米颗粒。在半导体纳米棒的存在下会发生单独的光化学路径,从而导致激子形成并通过电子在表面缺陷部位的俘获来猝灭。局部电子充当种子点,导致异质形核并形成表面结合的金属纳米粒子。仔细选择合成条件可以使Pt和Pd颗粒沉积在CdS和CdS0.4Se0.6纳米棒上,并且在形成独立的金属颗粒(70-94%在高温条件下未连接)。另外,通过利用不同纳米域之间的带隙差异,金属光沉积发生在具有组成各向异性的CdS0.4Se0.6纳米棒的特定段上。短波长的辐射有利于在纳米棒的高带隙富CdS区域上形成Pd纳米颗粒(分别在350和420 nm处为57%和55%),而较长波长的辐射则有利于在小的纳米棒上形成Pd纳米颗粒。纳米棒的CdSe富带隙区域(575 nm处为83%)。调整这些和类似异质结构的空间组成的能力将影响在纳米尺度上设计和引导能量流的能力。

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